P. Joeris et al., INVESTIGATIONS CONCERNING THE ROLE OF HYDROGEN IN THE DEPOSITION OF DIAMOND FILMS, Surface & coatings technology, 59(1-3), 1993, pp. 310-315
The usual process gases for the chemical vapour deposition of diamond
films with hot-filament or microwave techniques contain only a few per
cent of a hydrocarbon diluted in hydrogen, because it is often stated
that a superequilibrium concentration of atomic hydrogen is required.
We performed deposition experiments on Si(111) substrates in a microw
ave plasma without hydrogen dilution. By using Ar-CH4-O2 and Ar-C2H2-O
2 mixtures, the hydrogen content in the plasma was reduced. Diamond gr
owth took place only in a definite range of gas compositions. Our expe
riments show that oxygen is partly able to play the role of hydrogen b
y suppressing the deposition of amorphous or graphitic phases. The pha
se purity of the diamond films was investigated with Raman spectroscop
y and scanning electron microscopy. In order to monitor the plasma che
mistry and its changes due to oxygen addition and the reduction of the
hydrogen concentration, the plasma gas composition was measured with
a differentially pumped quadrupole mass spectrometer. The measurements
show that oxygen effectively lowers the content of acetylene in the p
lasma. Our investigations suggest that acetylene is not the main growt
h species.