THEORY AND SIMULATION OF CRYSTAL-GROWTH

Authors
Citation
Ac. Levi et M. Kotrla, THEORY AND SIMULATION OF CRYSTAL-GROWTH, Journal of physics. Condensed matter, 9(2), 1997, pp. 299-344
Citations number
185
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
2
Year of publication
1997
Pages
299 - 344
Database
ISI
SICI code
0953-8984(1997)9:2<299:TASOC>2.0.ZU;2-R
Abstract
Crystal growth phenomena are discussed with special reference to growt h from vapour. The basic concepts of crystal growth are recalled, incl uding the different growth modes, the dependence of the growth rate on disequilibrium and temperature, and the atomic processes relevant for growth. The methods used in crystal growth simulations are reviewed, with special reference to kinetic Monte Carlo methods. The roughness o f growing surfaces, and the roughness properties of the discrete and c ontinuum growth models (the latter being described via stochastic diff erential equations) are discussed, together with the special phenomena occurring in the vicinity of the roughening temperature. A number of simulations based on the six-vertex model and on kinetic counterparts of the BCSOS model are reviewed. Finally, the instabilities arising du ring growth an considered, including a discussion of phenomena such as dendritic growth and ramified cluster growth and reviewing the recent , extensive studies concerning unstable MBE growth.