Crystal growth phenomena are discussed with special reference to growt
h from vapour. The basic concepts of crystal growth are recalled, incl
uding the different growth modes, the dependence of the growth rate on
disequilibrium and temperature, and the atomic processes relevant for
growth. The methods used in crystal growth simulations are reviewed,
with special reference to kinetic Monte Carlo methods. The roughness o
f growing surfaces, and the roughness properties of the discrete and c
ontinuum growth models (the latter being described via stochastic diff
erential equations) are discussed, together with the special phenomena
occurring in the vicinity of the roughening temperature. A number of
simulations based on the six-vertex model and on kinetic counterparts
of the BCSOS model are reviewed. Finally, the instabilities arising du
ring growth an considered, including a discussion of phenomena such as
dendritic growth and ramified cluster growth and reviewing the recent
, extensive studies concerning unstable MBE growth.