STUDY ON VALENCE OFFSETS AT INXGA1-XAS INXAL1-XAS HETEROJUNCTION/

Authors
ZHENG JC ZHENG YM WANG RZ
Citation
Jc. Zheng et al., STUDY ON VALENCE OFFSETS AT INXGA1-XAS INXAL1-XAS HETEROJUNCTION/, Journal of physics. Condensed matter, 9(2), 1997, pp. 439-445
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
9
Issue
2
Year of publication
1997
Pages
439 - 445
Database
ISI
SICI code
0953-8984(1997)9:2<439:SOVOAI>2.0.ZU;2-9
Abstract
In this paper, the valence band offsets Delta E(v)(x) as a function of the alloy concentration x of the heterojunctions InxGa1-xAs/InxAl1-xA s are studied, using the average-bond-energy theory in conjunction wit h a cluster expansion method. It is shown that the variation in Delta E(v)(x) is nearly linear and the calculation results are in very good agreement with relevant experimental data.