SURFACE SENSITIVE X-RAY-ABSORPTION FINE-STRUCTURE MEASUREMENT USING SAMPLE CURRENT-INDUCED BY TOTALLY REFLECTED X-RAYS

X-ray induced current intensity and Auger electron intensity of a GaAs wafer are measured as a function of the angle of incidence of the x-r ays of 2-keV photon energy using synchrotron radiation. It is found th at the current intensity curve plotted as a function of the x-ray inci dent angle resembles the Auger electron intensity curve, but a little difference exists which originates from the difference of the probing depth between the two methods. It is concluded that the Auger electron probes 10-100 angstrom depth and the sample current probes 1-10 angst rom depth when the incident x-rays are totally reflected. On the other hand, x-ray induced current intensity of a Si wafer is measured as a function of incident photon energy in and out of the total reflection condition, and by this way, x-ray absorption fine structure (XAFS) spe ctra are obtained. It is found that the XAFS measured using the sample current is more surface sensitive (approximately 5 angstrom) than the Auger electron yield (approximately 50 angstrom) when the incident x- rays are totally reflected.