MOBILITY OF CHARGE-CARRIERS IN VAPOR-PHASE GROWN C-60 SINGLE-CRYSTAL

Transport properties of charge carriers in the fullerene C60 single cr ystal grown from the vapor phase were studied by using the time-of-fli ght technique, and absolute values of mobility for electrons mu(e) = 0 .5+/-0.2 cm2/V s, and holes mu(h) = 1.7+/-0.2 cm2/V s at room temperat ure were measured. Crystals were characterized as having about 3 x 10( 13) cm-3 deep trapping sites for holes. The temperature dependence of mu(h) was measured over a broad temperature range. Two features were r evealed: (i) a step-wise increase of the mobility below the phase-tran sition and (ii) almost temperature independence of mobility in the reg ions 50-200 and 250-310 K.