PHOTORESPONSE OF UNDOPED AND IODINE-DOPED IRON-OXIDE THIN-FILM ELECTRODES

Authors
Citation
Sum. Khan et Zy. Zhou, PHOTORESPONSE OF UNDOPED AND IODINE-DOPED IRON-OXIDE THIN-FILM ELECTRODES, Journal of electroanalytical chemistry [1992], 357(1-2), 1993, pp. 407-420
Citations number
30
Categorie Soggetti
Electrochemistry,"Chemistry Analytical
Journal title
Journal of electroanalytical chemistry [1992]
ISSN journal
15726657 → ACNP
Volume
357
Issue
1-2
Year of publication
1993
Pages
407 - 420
Database
ISI
SICI code
Abstract
Undoped and iodine doped iron oxide thin films were prepared spray pyr olytically and their photoresponse towards the water splitting reactio n in alkaline medium (pH 13) was studied. The optimum spray time and t he corresponding film thickness for maximum photoresponse were determi ned. An undoped iron oxide film approximately 50 nm thick gave rise to a maximum photocurrent density and its wavelength-dependent absorptio n coefficients of light were also measured. Raman spectroscopic analys is indicates the formation of alpha-Fe2O3 film by the spray pyrolytic method. The band gap of this undoped film was found to be 1.97 eV. A t heoretical expression of photocurrent density at the thin film electro de-solution interface was developed. A good correlation was found betw een theoretical and experimental photocurrent densities. Importantly, such an iodine-doped iron oxide film approximately 100 nm thick gave r ise to a fivefold increase in maximum photocurrent density compared wi th an undoped optimum thick film of approximately 50 nm. These observa tions were attributed to increased mobility of carriers and an increas e in the absorption of light in the iodine-doped film. Model calculati ons show that five undoped iron oxide thin film electrodes of optimum thickness in stacks generate a photocurrent density of 5 mA cm-2 where as an optimized stack of iodine-doped film produced a photocurrent den sity of 15 mA cm-2 at 0.82 V vs. SHE.