INVESTIGATION OF OPTICAL CHARACTERISTICS OF QUANTUM-WELL CHALCOGENIDESTRUCTURES GROWN BY LASER-INDUCED VAPOR EPITAXY

Citation
Ms. Brodin et al., INVESTIGATION OF OPTICAL CHARACTERISTICS OF QUANTUM-WELL CHALCOGENIDESTRUCTURES GROWN BY LASER-INDUCED VAPOR EPITAXY, Kvantovaa elektronika, 20(7), 1993, pp. 629-630
Citations number
5
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
03687147
Volume
20
Issue
7
Year of publication
1993
Pages
629 - 630
Database
ISI
SICI code
0368-7147(1993)20:7<629:IOOCOQ>2.0.ZU;2-N
Abstract
Laser-induced vapor epitaxy is shown to be applicable for a synthesis of quantum-well structures. Using this technology, the single quantum- wells of ZnS-ZnSe-ZnS/GaAs(100) type and ZnS-ZnSe/GaAs(100) superlatti ces have been grown for the first time. Reflection and photoluminescen ce spectra of the obtained structures have been studied.