Ms. Brodin et al., INVESTIGATION OF OPTICAL CHARACTERISTICS OF QUANTUM-WELL CHALCOGENIDESTRUCTURES GROWN BY LASER-INDUCED VAPOR EPITAXY, Kvantovaa elektronika, 20(7), 1993, pp. 629-630
Laser-induced vapor epitaxy is shown to be applicable for a synthesis
of quantum-well structures. Using this technology, the single quantum-
wells of ZnS-ZnSe-ZnS/GaAs(100) type and ZnS-ZnSe/GaAs(100) superlatti
ces have been grown for the first time. Reflection and photoluminescen
ce spectra of the obtained structures have been studied.