ON AN INFLUATION OF DIFFERENT EPITAXIAL R EGIMES ON FILM STRUCTURE

An influence is studied of electromagnetic radiation on epitaxial stru cture growing processes. Highpower xenon lamp, pulse and continuouse U V laser were used in experiments on A B-4(6) films growing. The condit ions of obtainind of nonplanar film structures are detemined. Properti es of filmes doped with indium, including transient layer between the film and the substrate are studied, as well as film peeling processes. The model of processes going on the crystallization surface is consid ered and the necessity to take defects kinetics into account when anal izing photostymulated epitaxy is shown.