A NEW MOSFET OUTPUT CONDUCTANCE MEASUREMENT TECHNIQUE

A new technique is presented for accurate measurement of the output co nductance of a metal-oxide semiconductor field effect transistor (MOSF ET). This technique allows the measurement of output conductance down to the sub muS region with an accuracy of better than 1%. Measurements in this range of output conductance are plagued by stray capacitances and noise. The new technique effectively combats these sources of err or. The above-mentioned accuracy is maintained even when the susceptan ce due to the stray capacitance is as much as five times the conductan ce being measured.