BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)

Authors
NAYAK DK USAMI N SUNAMURA H FUKATSU S SHIRAKI Y
Citation
Dk. Nayak et al., BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100), JPN J A P 2, 32(10A), 1993, pp. 120001391-120001393
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
32
Issue
10A
Year of publication
1993
Pages
120001391 - 120001393
Database
ISI
SICI code
Abstract
High-quality completely lattice-relaxed SiGe buff er layer has been gr own on Si(100) by using gas source molecular beam epitaxy. Pseudomorph ic Si layer has been grown on this lattice-relaxed SiGe buffer layer t o form SiGe/strained-Si/SiGe quantum wells. Intense band-edge photolum inescence has been observed from these quantum wells for the first tim e. Quantum confinement effect in SiGe/strained-Si/SiGe quantum well ha s been demonstrated from the systematic shift of photoluminescence ene rgy peaks with the width of the quantum well.