Numerical simulations and experimental results are reported on bistabl
e switching in a semiconductor nonlinear vertical Bragg reflector. An
improved structure with an additional linear rear mirror and a phase-a
djusting layer was predicted to have lower threshold for bistability t
han a Fabry-Perot type device. The experimental observation of bistabl
e switching in a nonlinear Bragg reflector is reported. Achieved thres
hold was comparable with a nonlinear Fabry-Perot device; the simpler s
tructure of a nonlinear Bragg device may represent an advantage with r
espect to growth tolerances.