BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS INGAASP/INGAP LASERS/

We report the fabrication and comparison of buried heterostructure and ridge waveguide 0.98 mum lasers with strained InGaAs quantum wells, s tepped InGaAsP confinement layers, and InGaP claddings. The buried het erostructure (BH) lasers exhibit superior performance with lower thres hold and higher power. We demonstrate a BH laser with 4.4 mA threshold current, 77% differential quantum efficiency, 196 mW of output power, and 150 K characteristic temperature. No catastrophic optical damage is observed on the laser facets, although the facets were not coated o r treated.