Free-standing chemically vapor deposited (CVD) single-crystalline diam
ond films have been fabricated by a sequence of processes including hi
gh energy ion implantation, microwave plasma enhanced chemical vapor d
eposition, and the final separation of the diamond epilayer from the s
ubstrate by heating in oxygen. The homoepitaxial diamond film separate
d from the substrate is about 15 mum thick. It is flat and transparent
, and exhibits a sharp diamond Raman peak without nondiamond backgroun
d signals. This process is promising for mass production of large-area
single-crystalline diamonds with the size restricted only by the avai
lability of one large initial diamond substrate. The initial substrate
is expensive but can be used repetitively to produce a large number o
f single-crystalline CVD diamond films.