ELECTRONIC-PROPERTIES OF A ONE-DIMENSIONAL CHANNEL FIELD-EFFECT TRANSISTOR FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS

A high mobility electron gas was grown by molecular beam epitaxy on pa tterned GaAs consisting of a p-GaAs/n-GaAs multilayered structure. By contacting to the p-GaAs and n-GaAs layers separately and applying the appropriate bias voltages, we were able to laterally modulate the ele ctron gas to form narrow conduction channels. At 1.5 K we obtain an el ectron mobility of 5X10(5) cm2/Vs and when operated in the field effec t transistor mode a transconductance of 50 ms/mm for a device with a 5 0-mum source/drain separation.