TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT FOR LOW-VOLTAGE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS

Authors
LAU WS CHAN DSH PHANG JCH CHOW KW PEY KS LIM YP CRONQUIST B
Citation
Ws. Lau et al., TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT FOR LOW-VOLTAGE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS, Applied physics letters, 63(16), 1993, pp. 2240-2242
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
16
Year of publication
1993
Pages
2240 - 2242
Database
ISI
SICI code
0003-6951(1993)63:16<2240:TOECFL>2.0.ZU;2-9
Abstract
A new low-voltage contrast mechanism due to electron hole pairs genera ted in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechan ism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM co ntrast. Potential applications include large area imaging and quantita tive imaging of oxide defects.