PHOTOLUMINESCENCE IN ZNSE-BASED QUANTUM-WELL WIRE STRUCTURES

We have fabricated quantum well wire structures by using electron beam lithography and reactive ion etching techniques on (Zn,Cd)Se/Zn(S,Se) multiple quantum well structures. Photoluminescence efficiencies have been studied as a function of the wire width (down to about 400 angst rom), and temperature. The results indicate that the sidewall surfaces exposed during the dry etching play an important role in providing no nradiative centers for the optically injected carriers, strongly dimin ishing the radiative efficiencies in the smallest structures.