PLANAR FIELD-INDUCED QUANTUM-DOT TRANSISTOR

We propose and demonstrate a new field-induced quantum dot transistor that has a nanoscale dot-gate inside the gap of a split gate. Because of the novel structure and small dot size, strong oscillations in the drain current as a function of the gate bias were observed at a temper ature up to 4.2 K or with a drain bias up to 5 mV. Temperature depende nt study showed that the energy gaps in the dot are as large as 4.5 me V. Simulation indicates that, in the device, quantum size effect and C oulomb effect are comparable; both contribute significantly to the ene rgy gaps in the quantum dot.