VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS IN SI GEXSI1-X/GE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
XIE YH MONROE D FITZGERALD EA SILVERMAN PJ THIEL FA WATSON GP
Citation
Yh. Xie et al., VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS IN SI GEXSI1-X/GE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 63(16), 1993, pp. 2263-2264
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
16
Year of publication
1993
Pages
2263 - 2264
Database
ISI
SICI code
0003-6951(1993)63:16<2263:VH2HGI>2.0.ZU;2-O
Abstract
Modulation-doped Si/GexSi1-x/Ge/GexSi1-x structures were fabricated in which a thin Ge layer was employed as the conduction channel for the two-dimensional hole gas. The strained heterostructure was fabricated on top of a low threading dislocation density, totally relaxed, GexSi1 -x buffer layer with a linearly graded Ge concentration profile. The b est mobility of the two-dimensional hole gas is 55000 cm2/V s at 4.2 K with a concentration-dependent hole effective mass of less-than-or-eq ual-to 0.10m0. The effect of the Ge/GeSi interface roughness on the 2D HG mobility was studied.