IMPROVED MATERIALS FOR MOVPE GROWTH OF GASB AND INSB

Some factors affecting the MOVPE growth of GaSb and InSb and structure s based on these materials and their alloys are investigated. Trimethy lantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400-degrees-C as compa red with 450-degrees-C when using TMSb. All the alkyls used have had t heir pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucl eation of GaSb onto GaAs substrates has been performed using atomic fo rce microscopy (AFM), TEM (cross-sectional and plan view) and quasi-el astic light scattering (QLS). Bulk layers of GaSb have been grown usin g optimized and non-optimized buffer layers to assess the effect on op tical, structural and electrical properties of the grown layers.