V. Bareikis et al., EFFECT OF HYDROGEN ON HOT-ELECTRON NOISE IN SHORT SAMPLES OF GAAS, Semiconductor science and technology, 8(10), 1993, pp. 1829-1833
We present experimental results on hot electron noise in untreated and
hydrogenated samples of silicon-doped GaAs. Short n+-n-n+ structures
are used to resolve noise sources arising from different mechanisms wh
ich dominate electron scattering. Passivation of centres of impurity s
cattering by hydrogen and the resultant effect on noise temperature an
d spectral density of current fluctuations are clearly observed at int
ermediate hydrogen doses (10(17) cm-2) low-field mobility of electrons
increases, electron heating by electric field is favoured, noise sour
ces due to GAMMA-L and GAMMA-X intervalley transfer and resonant scatt
ering of hot electrons are better resolved, especially at low temperat
ures. The effects at a hydrogen dose of 10(18) cm-2 suggest that the i
mpurity passivation is accompanied by formation of new scattering cent
res.