MAGNETIC CIRCULAR-DICHROISM OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE

Authors
REINKE J WEIHRICH H GREULICHWEBER S SPAETH JM
Citation
J. Reinke et al., MAGNETIC CIRCULAR-DICHROISM OF A VANADIUM IMPURITY IN 6H-SILICON CARBIDE, Semiconductor science and technology, 8(10), 1993, pp. 1862-1867
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
10
Year of publication
1993
Pages
1862 - 1867
Database
ISI
SICI code
0268-1242(1993)8:10<1862:MCOAVI>2.0.ZU;2-0
Abstract
The magnetic circular dichroism of the absorption (MCDA) Of V(Si)4+ in 6H-silicon carbide shows a strong temperature dependence. Within a cr ystal field approach the MCDA and g-factors of the hexagonal site defe ct could be explained, whereas the situation is more complicated for b oth quasi-cubic site defects owing to a dynamical Jahn-Teller effect