MODELING OF CVD REACTORS - THERMOCHEMICAL AND MASS-TRANSPORT APPROACHES FOR SI1-XGEX DEPOSITION

Over the years, the design of chemical vapor deposition processes has relied on accumulated empirical ability. It is now well established th at the properties of films grown by this chemical process are strongly determined by both transport phenomena and homogeneous and heterogene ous reactions in the reactor. Thermodynamic calculations and mass tran sport modeling provide a possible approach to delineate the general fe atures of a given process. The application of this concept to the depo sition of Si1-xGex alloys has led to a better knowledge of the physico chemical phenomena involved in the growth of these materials.