ELABORATION OF IN-SITU PHOSPHORUS-DOPED POLYSILICON FILMS UNDER LPCVDCONDITIONS - PROCESS MODELING AND CHARACTERIZATION

Authors
TOUNSI A SCHEID E AZZARO C DUVERNEUIL P COUDERC JP
Citation
A. Tounsi et al., ELABORATION OF IN-SITU PHOSPHORUS-DOPED POLYSILICON FILMS UNDER LPCVDCONDITIONS - PROCESS MODELING AND CHARACTERIZATION, Journal de physique. IV, 3(C3), 1993, pp. 123-130
Citations number
15
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
3
Issue
C3
Year of publication
1993
Pages
123 - 130
Database
ISI
SICI code
1155-4339(1993)3:C3<123:EOIPPF>2.0.ZU;2-N
Abstract
In this paper, results of a complete study dealing with the deposition of in situ phosphorus doped polysilicon and combining experimental ap proach, deposition modelling and film characterization are presented. Their interpretation has helped to put forward the importance of the e ntrance zone length as deposition parameter, which was most often tota lly neglegted.