GROWTH-STUDIES AND PHYSICAL CHARACTERIZATIONS OF PB-SE-TE EPILAYERS GROWN BY HWE

The deposition process of IV-VI semiconductors is studied in order to determine optimal conditions of evaporation. A thermodynamical model o f the growth is proposed and its use explained in HWE applications. Us ing these results, epitaxial thin films have been achieved on BaF2 and Si substrates in all the composition range from PbSe to PbTe. The epi layers obtained were then characterized by X-ray diffraction, Auger sp ectroscopy, SEM observations and electrical measurements. An optical s tudy from 4.2 to 300K is finally presented and the energy band gap dep endence versus composition and temperature has been established.