HETEROSTRUCTURE OF BINARIES II-VI SEMICONDUCTORS ZNTE AND ZNSE III-V (GAAS, INP, GASB)/

Epitaxial ZnSe, ZnTe and multilayers have been grown on III-V ( InP, G aAs and GaSb ) substrates by organometallic vapor phase epitaxy. First , the OMVPE growth technique used is described. The microstructural qu ality of the epilayers was determined by SEM (EDX) and X-Ray diffracti on. Mechanichal strain, due firstly to a mismatch between II-VI layers and III-V substrates and secondly to different thermal expansion coef ficients is studied. Reflectivity and photoluminescence spectra are pr esented for one type of material. Growth parameters are identified ari d problems associated to experimental conditions are discussed.