AES CHARACTERIZATION AND DEPTH PROFILES MEASUREMENTS OF ALN THIN-FILMS ON SIO2 SUBSTRATES

Depth profiles measurements of the elements Al, Si, N and O were deter mined using Auger electron spectrometry during ion etching of an AlN C .V.D. thin film deposited on an amorphous silica substrate. The Auger spectra collected at various time intervals showed the presence of Al- O, Si-O and Si-N chemical bondings in the interphase AlN/SiO2. This re sult indicates that the growth of an AlN thin film on a silica substra te begins by a strong oxidation of aluminium which involves a partial nitridation of silicon.