A STUDY OF REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS

Authors
ALEXANDROV SE HITCHMAN ML SHAMLIAN S
Citation
Se. Alexandrov et al., A STUDY OF REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS, Journal de physique. IV, 3(C3), 1993, pp. 233-240
Citations number
12
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
3
Issue
C3
Year of publication
1993
Pages
233 - 240
Database
ISI
SICI code
1155-4339(1993)3:C3<233:ASORPC>2.0.ZU;2-8
Abstract
The growth of silicon nitride (Si-NxHy) films from SiH4 and N2 by capa citively coupled remote PECVD is described for the first time. The inf luence of process parameters on the growth rate, concentration of bond ed hydrogen, and properties of deposited films is discussed. The most probable mechanism of film formation is proposed on the basis of the e xperimental results obtained.