DEPOSITION OF TITANIUM NITRIDE THIN-FILMS AT LOW-TEMPERATURES BY CVD USING METALORGANIC AND ORGANOMETALLIC TITANIUM COMPOUNDS AS PRECURSORS

Authors
SPEE CIMA LINDEN JL VANDERZOUWENASSINK EA TIMMER K VERBEEK F MEINEMA HA FRIGO DM VANDERVEN S
Citation
Cima. Spee et al., DEPOSITION OF TITANIUM NITRIDE THIN-FILMS AT LOW-TEMPERATURES BY CVD USING METALORGANIC AND ORGANOMETALLIC TITANIUM COMPOUNDS AS PRECURSORS, Journal de physique. IV, 3(C3), 1993, pp. 289-296
Citations number
12
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
3
Issue
C3
Year of publication
1993
Pages
289 - 296
Database
ISI
SICI code
1155-4339(1993)3:C3<289:DOTNTA>2.0.ZU;2-5
Abstract
A series of titanium compounds, Ti(NMe2)4, t-BuTi(NMe2)3, [Ti(mu-N-t-B u)(-NMe2)2]2, Ti(t-BuDAD)2 and CpTiC7H7, have been screened in combina tion with NH3 for their suitability as precursors for the CVD of titan ium nitride films at substrate temperatures of 300-600-degrees-C and a system pressure ot 1.5 Torr. The best TiN layers have been grown usin g t-BuTi(NMe2)3 and NH3, from which an 0.8 mum thick layer deposited a t 400-degrees-C, showed a resistivity of 1.4 . 10(-3) OMEGA . cm and c ontained 5 atom% carbon and 6 atom% oxygen.