LPCVD OF SIC LAYERS IN A HOT-WALL REACTOR USING TMS PRECURSOR

SiC polycrystalline layers were grown by LPCVD in a hot wall reactor u sing tetramethylsilane (TMS) diluted in hydrogen as precursor. The mor phology and the structure of the films were analyzed in terms of depos ition temperature, total pressure in the reactor and TMS flow rate. Th e layers have been characterized using various techniques: SEM, X-ray diffraction and TEM (HREM and EELS).