PROCESS CHARACTERIZATION OF LPCVD TEOS-OZONE BASED SIO2-FILMS

Process characterization of 400 nm thick LPCVD-SiO2 films based on TEO S-Ozone chemistry was performed. Films were deposited on six inch sili con wafers using a single wafer cluster system. The process characteri zation was carried out starting from a standard process taken as refer ence, around which the main process parameters, temperature (300-430-d egrees-C), pressure (50-80 torr), and gas ratio (3:1-7:1), were varied one at a time whilst keeping the remainder fixed. The effect of proce ss parameters on deposition rate, thickness uniformity within wafer, f ilm stress, etch rate and refractive index was investigated. On the ba sis of these results the optimum working conditions for the industrial implementation of the process were determined and proven for sidewall spacer formation and 1Mbit EPROM devices. An interpretation of the da ta of deposition rate is provided in terms of the elementary processes involved.