PROPERTIES OF MU-PCVD POLYSILICON FILMS AFTER RAPID THERMAL ANNEALING

Polly-Silicon Films obtained by muPCVD were studied with respect to th eir structural and electrical properties influenced by rapid thermal a nnealing (RTA) in vacuum. In addition an annealing in H-2 atmosphere a t atmospheric pressure was curried out. The structure and the morpholo gy of the films were studied by Reflection High Energy Electron Diffra ction (RHEED) technique and Scanning Electron Microscopy (SEM), respec tively. An effect of increase of the crystallinity of the poly-Si film s was observed as a result of RTA annealing. These observations coinci de well with the measured sheet resistance of the layers. It was found that sheet resistance of the as-deposited films is about 5MOMEGA/squa re and it decreases to a value of about 1.6MOMEGA/square in dependence on the annealing.