GA0.66IN0.34AS GAINASP/INP TENSILE-STRAINED SINGLE-QUANTUM-WELL LASERS WITH 70-NM PERIOD WIRE ACTIVE-REGION/

Fairly low threshold current operation was achieved with Ga0.66In0.34A s/GaInAsP/InP tensile-strained (TS) single-quantum-well (SQW) lasers w ith 30 is similar to 40-nm-wide and 70-nm-period wire active region fa bricated by a combination of a wet chemical etching and two-step OMVPE growths. Threshold current as low as 16 mA and threshold current dens ity of 816 A/cm2 were obtained under a room temperature CW condition. By comparing the spontaneous emission peak wavelength of the TS-SQW wi re laser with that of the TS-SQW film laser, an approximately 10-meV b lue shift of the fundamental energy level was observed in the TS-SQW w ire laser.