CW OPERATION OF CORNER CAVITY SEMICONDUCTOR-LASERS

Etched facet semiconductor lasers have been fabricated and tested unde r CW operating conditions. The lasers consist of stripes formed by pro ton implantation, a total internal reflection (TIR) corner, and an out put coupling facet. Devices with a variety of output coupling geometri es were fabricated. Laser threshold currents and spectral characterist ics were measured. Threshold current levels of devices with several di fferent aperture sizes are compared to those of structures with standa rd Fabry-Perot reflectors.