T. Narushima et al., HIGH-TEMPERATURE ACTIVE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE, Journal of the American Ceramic Society, 76(10), 1993, pp. 2521-2524
Active oxidation behavior of CVD-SiC in CO-CO2 atmospheres was investi
gated using a thermogravimetric technique in the temperature range bet
ween 1823 and 1923 K. The gas pressure ratio, P(CO2)/P(CO), was contro
lled between 10(-4) and 10(-1) at 0.1 MPa. Active oxidation rates (mas
s loss rates) showed maxima at a certain value of P(CO2)/P(CO), (P(CO2
)/P(CO)). In a P(CO2)/P(CO) region lower than the (P(CO2)/P(CO))*, a
carbon layer was formed on the SiC surface. In a P(CO2)/P(CO) region h
igher than the (P(CO2)/P(CO)), silica particles or a porous silica la
yer was observed on the SiC surface.