DEFECTS IN ELECTRON-IRRADIATED N-TYPE GAP

The characteristic ionization energies, barriers associated with captu re, energy levels, and introduction rates of the various electron and hole traps introduced by electron irradiation in n-type GaP are determ ined using deep level transient spectroscopy. The same traps are creat ed after 4 or 300 K irradiation. Their introduction rates correspond t o those expected for primary displacements. From the similarity to the case of GaAs, we conclude that the corresponding defects are intrinsi c defects (isolated vacancies and vacancy interstitial pairs) associat ed with the P (electron traps) and Ga (hole traps) sublattices.