CODIFFUSION OF ARSENIC AND PHOSPHORUS IMPLANTED IN SILICON

Citation
S. Solmi et al., CODIFFUSION OF ARSENIC AND PHOSPHORUS IMPLANTED IN SILICON, Journal of applied physics, 74(8), 1993, pp. 5005-5012
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
74
Issue
8
Year of publication
1993
Pages
5005 - 5012
Database
ISI
SICI code
0021-8979(1993)74:8<5005:COAAPI>2.0.ZU;2-C
Abstract
The codiffusion of arsenic and phosphorus implanted in silicon has bee n investigated after annealing at 900 and 1000-degrees-C for different concentrations of the dopants. Analysis of the profiles was performed using secondary-ion-mass spectroscopy, junction staining, and increme ntal resistivity and Hall measurements. The results do not evidence an y direct, interaction between the dopants. All the observed anomalous effects of the codiffusion, compared with the diffusion of the single elements by themselves, seem to be justifiable on the basis of the int eractions between the dopants and the defects produced by ion implanta tion. In addition, it has been observed that the presence of a high co ncentration of As atoms makes the annealing of the implantation damage faster and strongly reduces the P transient-enhanced diffusion. This effect favors the fabrication of graded shallow junctions with a high- surface-carrier concentration.