LIQUID-PHASE EPITAXY OF N-TYPE GAAS FROM BI SOLUTION

Liquid phase epitaxy of GaAs from Bi melt was studied for growth tempe ratures between 670-750-degrees-C. The layers were characterized by Va n der Pauw and photoluminescence measurements. All epitaxial layers we re n-type and exhibit low compensation and electron mobilities up to 6 X 10(4) cm2/V s at 77 K. A gradual increase in the n-type doping was observed with growth temperature. Intentional doping of GaAs with Sn l eads to a Sn distribution coefficient approximately 60 times larger fo r the Bi melt in comparison to the Ga melt. Extremely low compensation of the Sn-doped layers (K less-than-or-equal-to 0.1 for N(d)=2.5 X 10 (17) cm-3) is obtained.