M. Seta et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY MIGRATION-ENHANCED EPITAXY GROWTH OF INAS ALSB SUPERLATTICES/, Journal of applied physics, 74(8), 1993, pp. 5033-5037
We report on the gas source molecular beam epitaxy/migration enhanced
epitaxy (MEE) growth of InAs/AlSb superlattices. The incorporation beh
avior of constituent group III and group V atoms during growth is inve
stigated in detail using reflection high energy electron diffraction.
In and Sb atoms are found to move towards the surface during MEE growt
h, although the movement of In atoms can be reduced by lowering the gr
owth temperature. Raman scattering measurement of InAs/AlSb superlatti
ces shows that the formation of atomically controlled heterointerfaces
(InSb- or AlAs-type interfaces in InAs/AlSb superlattices) is difficu
lt. However, photoluminescence (PL) measurement shows that the optical
properties of quantum well structures are strongly dependent on the s
hutter sequence at the interfaces. 77 K PL from InAs/AlSb quantum well
structures with an InSb-type interface shutter sequence is one order
of magnitude stronger than that of the AlAs-type interface.