NUCLEATION OF COPPER ON TIW AND TIN DURING CHEMICAL-VAPOR-DEPOSITION

Copper grows as continuous films on various silicides and metals at su bstrate temperatures of 310-385-degrees-C, total pressures of 2-10 Tor r, and precursor vessel temperatures of 60-80-degrees-C (precursor mol e fractions of 0.004-0.35) with hydrogen using copper (II) hexafluoroa cetylacetonate [Cu(HFA)2] as the precursor. However, on TiW, TiW:N, an d TiN substrates, that were previously exposed to air, copper formed o nly small crystalline aggregates, not continuous films, perhaps becaus e of a thin surface layer of oxide. This conclusion was supported by A uger electron spectroscopy and scanning electron microscopy analyses.