EFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI ANODIC OXIDE INTERFACES/

In order to study the effect of water ratio on the properties of Si/an odic oxide (AO) interface, metal-oxide-semiconductor capacitors have b een used. Anodic oxide films were grown under constant current conditi ons by using 0.034 M NH4NO3, solution in methanol and its solutions di luted with deionized water of 2 and 10 per cent. The small signal capa citance and conductance of MOS were measured as a function of the bias at both room temperature and at 77 K. The analysis of the C-V curves showed a maximum of interface states of different values in lower-half of the band gap at room temperature, while this maximum was missing a t 77 K. This maximum may be due to the unsaturated dangling bonds of t he interfaces.