DEPENDENCE OF THE CHEMICAL ETCH RATE AND ETCH TIME OF SILICON ON THE POST-IMPLANTED DIFFUSION DEPTH - APPLICATION FOR MEMBRANE ACHIEVEMENT

Authors
GAISEANU F COBIANU C DASCALU D
Citation
F. Gaiseanu et al., DEPENDENCE OF THE CHEMICAL ETCH RATE AND ETCH TIME OF SILICON ON THE POST-IMPLANTED DIFFUSION DEPTH - APPLICATION FOR MEMBRANE ACHIEVEMENT, Journal of materials science letters, 12(20), 1993, pp. 1652-1653
Citations number
3
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
12
Issue
20
Year of publication
1993
Pages
1652 - 1653
Database
ISI
SICI code
0261-8028(1993)12:20<1652:DOTCER>2.0.ZU;2-J