Sj. Mahon et al., SIMULATION OF HEMT DC DRAIN CURRENT AND 1 TO 50 GHZ S-PARAMETERS AS AFUNCTION OF GATE BIAS, IEEE transactions on microwave theory and techniques, 41(6-7), 1993, pp. 1065-1066
The usefulness over an extended range of a HEMT model previously valid
ated for 1 to 25 GHz s-parameter model is shown. Experimental and simu
lation results for the dc drain current and 1-50 GHz s-parameters of a
pseudomorphic 0.32-pm-gate AlGaAs/InGaAs/GaAs HEMT are presented. The
model predicts the device's dc current and s-parameters as a function
of the applied gate bias with good accuracy. The core of the model is
directly dependent on the HEMT wafer structure and the physical gate
length. As part of the modeling procedure, a value of (1.77 +/- 0.07)
x 10(5) . m s-1 is found, confirming the results of other research, fo
r the electron velocity in undoped pseudomorphic In0.15Ga0.85As under
almost-equal-to 0.3 mum gates.