LARGE-SIGNAL HBT CHARACTERIZATION AND MODELING AT MILLIMETER-WAVE FREQUENCIES

This paper presents a detailed large-signal analysis for the heterojun ction bipolar transistor. Using a combination of computer models and c orrected measurements, we have analyzed the bias and frequency depende nce of the gain compression from 8 to 35 GHz for several HBT's. From 8 to 16 GHz, a commercial tuner system was used for making the measurem ents. However, beyond 26 GHz, an active load pull system was designed and constructed to circumvent problems created by component losses. Se veral comparisons between measured and modeled data are provided to il lustrate the effectiveness of the characterization technique.