PRODUCTION AND CHARACTERIZATION OF SI-N FILMS OBTAINED BY RF MAGNETRON SPUTTERING

Si-N films were deposited by sputtering from an Si3N4 target with diff erent deposition pressures and negative substrate bias. The films were amorphous and showed a ''featureless'' morphology. A high oxygen cont ent was detected in unbiased films. For these films the Si/N ratio was very high compared with the target composition, whereas for biased fi lms the opposite was observed. Si-N films presented cohesive failures for loads as high as 21 N and adhesive failure at 45 N when they were analysed by scratch test. Very high hardness (45 GPa) was obtained, pa rticularly for biased films. Unbiased films were softer, which is attr ibuted to the formation of silicon oxide and/or to a lower compressive stress level.