DIELECTRIC AND SEMICONDUCTING GE-C AND SI-C THIN-FILMS PREPARED BY PLASMA DEPOSITION FROM ORGANIC-COMPOUNDS

Authors
TYCZKOWSKI J KAZIMIERSKI P ODROBINA E
Citation
J. Tyczkowski et al., DIELECTRIC AND SEMICONDUCTING GE-C AND SI-C THIN-FILMS PREPARED BY PLASMA DEPOSITION FROM ORGANIC-COMPOUNDS, Surface & coatings technology, 60(1-3), 1993, pp. 609-612
Citations number
5
Categorie Soggetti
Material Science
Journal title
Surface & coatings technology → ACNP
ISSN journal
02578972
Volume
60
Issue
1-3
Year of publication
1993
Pages
609 - 612
Database
ISI
SICI code
0257-8972(1993)60:1-3<609:DASGAS>2.0.ZU;2-H
Abstract
A new type of audio-frequency reactor for plasma deposition with three parallel electrodes is presented. It has been found that small change s in the coupling capacity of the system can cause a drastic change in the electronic structure of deposited films. This effect is discussed for hydrogenated amorphous Ge-C and Si-C films prepared from organic compounds, using investigations of the optical absorption and electric al conductivity of these films.