J. Tyczkowski et al., DIELECTRIC AND SEMICONDUCTING GE-C AND SI-C THIN-FILMS PREPARED BY PLASMA DEPOSITION FROM ORGANIC-COMPOUNDS, Surface & coatings technology, 60(1-3), 1993, pp. 609-612
A new type of audio-frequency reactor for plasma deposition with three
parallel electrodes is presented. It has been found that small change
s in the coupling capacity of the system can cause a drastic change in
the electronic structure of deposited films. This effect is discussed
for hydrogenated amorphous Ge-C and Si-C films prepared from organic
compounds, using investigations of the optical absorption and electric
al conductivity of these films.