H. Elghitani et M. Pasquinelli, INFLUENCE OF DISLOCATIONS ON DARK CURRENT OF MULTICRYSTALLINE SILICONN+ P JUNCTION, Journal de physique. III, 3(10), 1993, pp. 1931-1939
Citations number
9
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
A detailed characterization of the dark current in large grained polyc
ristalline silicon cells is given. This current is greatly influenced
by the presence of dislocations. A new model for the shunt current tra
nsmitted by these defects is given. It is found that this current is p
roportional to exp(qV/2 kT). The comparison between the three essentia
l components of the dark current (diffusion, recombination and shunt c
omponent) indicates that the shunt component is the dominant one at lo
w applied voltage (V < 300 mV). Even at higher voltage (V > 300 mV) th
e shunt component is comparable to the diffusion one when the dislocat
ion density is greater than 10(5) cm-2. The computed results are in ag
reement with experimental ones.