INFLUENCE OF DISLOCATIONS ON PHOTOVOLTAIC PROPERTIES OF MULTICRYSTALLINE SILICON SOLAR-CELLS

The photovoltaic properties of large grained polycrystalline silicon s olar cells are mainly affected by the presence of dislocations. Both t he recombination of carriers at dislocation (which degrades the photoc urrent) and the transport of carriers along the dislocation cores cros sing the junction (which increases the dark current) are taken into ac count. The influence of the density N(dis) and recombination activity S(d) of dislocations on the short circuit current density J(sc), open circuit voltage V(oc), fill factor FF, and efficiency eta are computed . The computed values are compared to experimental results.