CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES

We have made a comparative study between different charge pumping tech niques (standard, three-level, spectroscopic) and conventional electri cal measurements (DLTS, C-V) on submicrometer MOSFET's and MOS devices . The energy distribution of interface states density has been determi ned for N and P type [100] substrates at different stages of a CMOS pr ocess. We have shown that charge pumping techniques are powerful tools for characterizaton and diagnostic which allow to evaluate, with a gr eat sensitivity, the influence of passivation annealings and process a ccidents on the quality Of Si-SiO2 interface.