Jl. Autran et al., CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES, Journal de physique. III, 3(10), 1993, pp. 1947-1961
Citations number
24
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
We have made a comparative study between different charge pumping tech
niques (standard, three-level, spectroscopic) and conventional electri
cal measurements (DLTS, C-V) on submicrometer MOSFET's and MOS devices
. The energy distribution of interface states density has been determi
ned for N and P type [100] substrates at different stages of a CMOS pr
ocess. We have shown that charge pumping techniques are powerful tools
for characterizaton and diagnostic which allow to evaluate, with a gr
eat sensitivity, the influence of passivation annealings and process a
ccidents on the quality Of Si-SiO2 interface.