CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES

Citation
Jl. Autran et al., CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES, Journal de physique. III, 3(10), 1993, pp. 1947-1961
Citations number
24
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
ISSN journal
11554320
Volume
3
Issue
10
Year of publication
1993
Pages
1947 - 1961
Database
ISI
SICI code
1155-4320(1993)3:10<1947:COISIS>2.0.ZU;2-V
Abstract
We have made a comparative study between different charge pumping tech niques (standard, three-level, spectroscopic) and conventional electri cal measurements (DLTS, C-V) on submicrometer MOSFET's and MOS devices . The energy distribution of interface states density has been determi ned for N and P type [100] substrates at different stages of a CMOS pr ocess. We have shown that charge pumping techniques are powerful tools for characterizaton and diagnostic which allow to evaluate, with a gr eat sensitivity, the influence of passivation annealings and process a ccidents on the quality Of Si-SiO2 interface.