ATOMIC-FORCE MICROSCOPY AND INFRARED-SPECTROSCOPY STUDIES OF HYDROGENBAKED SI SURFACES

A H-2 pre-bake at temperatures over 1050-degrees-C is typically used p rior to Si epitaxial growth. In this study surface microroughness prob ed with tapping mode Atomic Force Microscopy (AFM) is correlated with multiple internal reflection infrared spectroscopy measurements for th e different steps involved before epitaxy. A novel sample preparation technique was used for the multiple internal reflection set-up. A stro ng correlation was found between the presence of surface terraces and the IR double monohydride peaks for H-2 annealed Si surfaces. We there fore put forward that the terraces are due to the H-2 pre-bake step. T hese terraces remain after epitaxial deposition.