YBA2CU3O7 GROWTH ON METAL SUBSTRATES WITH SRTIO3 BUFFER LAYER BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Citation
T. Umemura et al., YBA2CU3O7 GROWTH ON METAL SUBSTRATES WITH SRTIO3 BUFFER LAYER BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 32(10B), 1993, pp. 120001513-120001515
Citations number
9
Categorie Soggetti
Physics, Applied
Volume
32
Issue
10B
Year of publication
1993
Pages
120001513 - 120001515
Database
ISI
SICI code
Abstract
We prepared oxide superconducting YBa2Cu3O7-x thin films on Hastelloy substrates with a SrTiO3 buffer layer by metal-organic chemical vapor deposition (MOCVD) using a single source of tetrahydrofuran solution. To clarify the cause of poor superconducting properties, the cross sec tion of YBa2Cu3O7-x/SrTiO3/Hastelloy was examined by TEM. The YBa2Cu3O 7-x and SrTiO3 layers grew perpendicular to the Hastelloy surface, whi ch was columnar. The orientation of the YBa2Cu3O7-x layer seems to dep end on that of the SrTiO3 layer. As a result, it is considered that th e deposition of a good single-crystalline buffer layer on Hastelloy is the most important factor for obtaining excellent YBa2Cu3O7-x films.